SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device using an oxide semiconductor, which achieves miniaturization while maintaining favorable characteristics.SOLUTION: A semiconductor device comprises: an oxide semiconductor layer; a source electrode and a drain electrode which contact the oxide semiconductor layer; a gate electrode which overlaps the oxide semiconductor layer; and a gate insulation layer provided between the oxide semiconductor layer and the gate electrode. The source electrode and the drain electrode include a first conductive layer and a second conductive layer having a region extending from an edge of the first conductive layer in a channel length direction.