| 摘要 |
PROBLEM TO BE SOLVED: To provide a new semiconductor device using a conductive film containing Cu for a wiring and such in a transistor using an oxide semiconductor film.SOLUTION: The semiconductor device includes: a first insulation film; an oxide semiconductor on the first insulation film; a gate electrode that overlaps with the oxide semiconductor through a gate insulation film; a second insulation film that is in contact with a side face of the gate electrode; and a third insulation film that is in contact with a top surface of the gate electrode. The gate electrode contains a Cu-X alloy film (X is a mixture of Mn, Ni, Cr, Fe, Co, Mo, Ta, Ti, Zr, Mg, Ca, or mixture of two or more kinds thereof). |
