Thermal energy dissipation using backside thermoelectric devices

摘要

Embodiments of the present invention provide a semiconductor structure and method to dissipate heat generated by semiconductor devices by utilizing backside thermoelectric devices. In certain embodiments, the semiconductor structure comprises an electronic device formed on a first side of the semiconductor structure. The semiconductor structure also comprises a thermoelectric cooling device formed on a second side of the semiconductor structure in close proximity to a region of the semiconductor structure where heat dissipation is desired, wherein the thermoelectric cooling device includes a Peltier junction. In other embodiments, the method comprises forming an electronic device on a first side of a semiconductor structure. The method also comprises forming a thermoelectric cooling device on a second side of the semiconductor structure in close proximity to a region of the semiconductor structure where heat dissipation is desired, wherein the thermoelectric cooling device includes a Peltier junction.

主权项

1. A semiconductor structure comprising:
a buried dielectric layer including a first side and a second side opposite the first side; a first side portion located over the first side of the buried dielectric layer; a second side portion located over the second side of the buried oxide layer; and a thermoelectric cooling device; wherein: the first side portion includes integrated circuit type circuitry; the thermoelectric cooling device includes a first Peltier junction located in, and forming a part of, the second side portion; and the second side portion is at least substantially free of integrated circuit type circuitry.