| 摘要 |
PROBLEM TO BE SOLVED: To provide a lithography apparatus that is advantageous in achieving both of throughput and overlap accuracy, for example.SOLUTION: A pattern forming method includes: an acquisition step S121 of acquiring a first compensation value for a result of second alignment measurement relating to first pattern formation in which the number of alignment marks to be measured is less than that in first alignment measurement, on the basis of a result of the first alignment measurement relating to the first pattern formation; a measurement step S102 of implementing the second alignment measurement relating to second pattern formation different from the first pattern formation; a generation step S105 of generating a second compensation value for a result obtained in the measurement step on the basis of a condition relating to the second pattern formation and the first compensation value; and a pattern forming step S108 of performing the second pattern formation on a substrate on the basis of the result obtained in the measurement step and the second compensation value. |
