MANUFACTURING METHOD OF POLISHING LIQUID AND POLISHING LIQUID, AND POLISHING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a polishing liquid having small wiring density dependency and excellent in surface flatness after polishing and over-polishing resistance in a CMP technology for polishing a film to be polished formed on a surface of a substrate.SOLUTION: There is provided a polishing liquid containing cerium oxide particles, an acrylic acid-based polymer, an organic acid compound, a pH adjustment agent, and water, where the acrylic acid-based polymer is a polymer obtained by polymerizing a monomer component containing at least one kind selected from a group consisting of acrylic acid and methacrylic acid, a ratio of the blended amount of the organic acid compound to the total mass of the polishing liquid (B mass%) to the blended amount of the acrylic acid-based polymer to the total mass of the polishing liquid (A mass%), (B/A) is 0.5 to 2.5, and pH is 4.0 to 6.0.