METHOD OF FIN PATTERNING

摘要

Embodiments of the present invention may include a semiconductor patterning method involving forming a fin on a substrate, where the fin may have a sloped sidewall. The fin may be characterized by an initial height and a first width measured proximate a midpoint of the initial height. The method may include forming a masking layer above the fin, and the method may involve removing a first portion of the masking layer. The method may include decreasing the first width of the fin while maintaining the initial height.

主权项

1. A semiconductor patterning method comprising:
forming a fin on a substrate, wherein the fin comprises a sloped sidewall and is characterized by an initial height and a first width measured proximate a midpoint of the initial height; forming a masking layer above the fin; removing a first portion of the masking layer; and decreasing the first width of the fin while maintaining the initial height.