发明名称 STACKED SEMICONDUCTOR SYSTEM HAVING INTERPOSER OF HALF-ETCHED AND MOLDED SHEET METAL
摘要 A semiconductor system (900) has a flat interposer (510) with a first surface (401a) in a first plane, a second surface (401b) in a parallel second plane, and a uniform first height (401) between the surfaces; the interposer is patterned in metallic zones separated by gaps (412, 415), the zones include metal of the first height and metal of a second height (402) smaller than the first height; an insulating material fills the gaps and the zone differences between the first and the second heights. Semiconductor chips of a first (610) and a second (611) set have first terminals attached to metallic zones of the first interposer surface while the chips of the second set have their second terminals facing away from the interposer. A first leadframe (700) is attached to the second terminals of the second set chips, and a second leadframe (800) is attached to respective metallic zones of the second interposer surface.
申请公布号 US2015214198(A1) 申请公布日期 2015.07.30
申请号 US201414167647 申请日期 2014.01.29
申请人 Texas Instruments Incorporated 发明人 Lee Han Meng Eugene Lee;Aziz Anis Fauzi bin Abdul;Sien Khoo Yien
分类号 H01L25/16;H01L21/48;H01L23/495;H01L23/31;H01L25/07;H01L25/00;H01L21/56;H01L21/78;H01L23/498;H01L23/00 主分类号 H01L25/16
代理机构 代理人
主权项 1. An interposer for semiconductor devices comprising; a flat sheet having a first surface in a first plane, a second surface in a parallel second plane, and a uniform first height between the surfaces; the sheet patterned in metallic zones separated by gaps, the zones including metal of the first height and metal of a second height smaller than the first height; and an insulating material filling the gaps and zone differences between the first and the second heights.
地址 Dallas TX US