| 摘要 |
The ion implantation apparatus of the invention includes a vacuum chamber 11, a roller electrode 13 having a portion of an outer circumferential part on which a film 2 is wound, voltage application means 21 for applying a voltage to the roller electrode, and gas introduction means 31 for supplying a gas into the vacuum chamber, in operation, voltage being applied to the roller electrode by the voltage application means, and the gas being supplied into the chamber through the gas introduction means, to thereby form a plasma, whereby a surface of the film is subjected to an ion implantation treatment, wherein an electrode member 42 is disposed so as to be opposite the portion of the roller electrode on which the film is wound. |
