| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing method which can uniformly deposit a film on a whole sidewall of an aperture area formed on a semiconductor substrate. <P>SOLUTION: A semiconductor device manufacturing method according to an embodiment of the present invention comprises: forming, on a semiconductor substrate on which an element is formed, an opening part including a bottom wall and a sidewall having a plurality of recesses; depositing a deposition component on the bottom wall and in each recess of the sidewall on the bottom wall side by performing vapor deposition or sputtering from the opening part side; and depositing the deposition component in each recess of the side wall on the opening part side by performing sputtering with applying a predetermined voltage to the semiconductor substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
