| 发明名称 | Method for forming a seed layer for the deposition of a metal on a substrate | ||
| 摘要 | A method for forming, on a substrate, a seed layer enabling the subsequent deposition of a metal layer, including the step of immersing the substrate in a bath containing a material from the ethoxysilane or siloxane family and a copper or nickel amidinate. | ||
| 申请公布号 | US9093381(B2) | 申请公布日期 | 2015.07.28 |
| 申请号 | US200912935186 | 申请日期 | 2009.03.30 |
| 申请人 | STMICROELECTRONICS (TOURS) SAS;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE | 发明人 | Barriere Clément;Fau Pierre;Chaudret Bruno;Margeat Olivier |
| 分类号 | H01L21/288;C23C18/16;C23C18/18;C23C18/20;H01L21/768 | 主分类号 | H01L21/288 |
| 代理机构 | Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A. | 代理人 | Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A. |
| 主权项 | 1. A method for forming, on a substrate, a seed layer enabling the subsequent deposition of a metal layer, comprising the step of immersing the substrate in a bath containing a material from the ethoxysilane family and a copper amidinate, wherein a hydrogen atmosphere is maintained above the bath to have a total pressure ranging between 2,000 and 4,000 hectopascals. | ||
| 地址 | Tours FR | ||