GaN-containing semiconductor structure

摘要

A method for forming a GaN-containing semiconductor structure is provided. The method comprises a substrate is provided, a nucleation layer is formed above the substrate, a diffusion blocking layer is formed above the nucleation layer, a strain relief layer is formed above the diffusion blocking layer, and a semiconductor layer is formed above the strain relief layer, in which the diffusion blocking layer is deposited on the nucleation layer such that the diffusion blocking layer can prevent the impurities out-diffusion from the substrate.

主权项

1. A method for forming a GaN-containing semiconductor structure by using metal-organic chemical vapor deposition (MOCVD), comprising:
providing a substrate; providing a nucleation layer on the substrate by using metal-organic chemical vapor deposition (MOCVD), wherein a forming temperature of the nucleation layer is from 500° C. to 800° C.; providing a diffusion blocking layer on the nucleation layer by using metal-organic chemical vapor deposition (MOCVD), wherein the forming temperature of the diffusion blocking layer is from 950° C. to 1200° C.; providing a strain relief layer on the diffusion blocking layer by using metal-organic chemical vapor deposition (MOCVD), wherein the forming temperature of the strain relief layer is from 450° C. to 600° C.; and providing a semiconductor layer on the strain relief layer by using metal-organic chemical vapor deposition (MOCVD), wherein the forming temperature of the semiconductor layer is from 950° C. to 1200° C.