发明名称 CONCURRENT MULTI-BAND RADIO FREQUENCY AMPLIFYING CIRCUIT
摘要 A concurrent multi-band RF amplifying circuit may include: an input impedance matching unit performing impedance matching on each of first and second band signals included in an input signal input through one input terminal; an input amplifying unit including first and second band amplifying units each amplifying the first and second band signals input through the input impedance matching unit; a common ground circuit unit connected between a first common node commonly connected to the first and second band amplifying unit and a ground and including an impedance device for matching of an input impedance; and an output amplifying unit amplifying signals from each of the first and second band amplifying units.
申请公布号 US2015207474(A1) 申请公布日期 2015.07.23
申请号 US201414486555 申请日期 2014.09.15
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 SEONG Nack Gyun
分类号 H03F3/193;H03F3/68;H03F1/56 主分类号 H03F3/193
代理机构 代理人
主权项 1. A concurrent multi-band radio frequency (RF) amplifying circuit comprising: an input impedance matching unit performing impedance matching on each of first and second band signals included in an input signal input through one input terminal; an input amplifying unit including first and second band amplifying units each amplifying the first and second band signals input through the input impedance matching unit; a common ground circuit unit connected between a first common node commonly connected to the first and second band amplifying unit and a ground and including an impedance device for matching of an input impedance; and an output amplifying unit amplifying signals from each of the first and second band amplifying units.
地址 Suwon-Si KR