发明名称 |
CONCURRENT MULTI-BAND RADIO FREQUENCY AMPLIFYING CIRCUIT |
摘要 |
A concurrent multi-band RF amplifying circuit may include: an input impedance matching unit performing impedance matching on each of first and second band signals included in an input signal input through one input terminal; an input amplifying unit including first and second band amplifying units each amplifying the first and second band signals input through the input impedance matching unit; a common ground circuit unit connected between a first common node commonly connected to the first and second band amplifying unit and a ground and including an impedance device for matching of an input impedance; and an output amplifying unit amplifying signals from each of the first and second band amplifying units. |
申请公布号 |
US2015207474(A1) |
申请公布日期 |
2015.07.23 |
申请号 |
US201414486555 |
申请日期 |
2014.09.15 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
SEONG Nack Gyun |
分类号 |
H03F3/193;H03F3/68;H03F1/56 |
主分类号 |
H03F3/193 |
代理机构 |
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代理人 |
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主权项 |
1. A concurrent multi-band radio frequency (RF) amplifying circuit comprising:
an input impedance matching unit performing impedance matching on each of first and second band signals included in an input signal input through one input terminal; an input amplifying unit including first and second band amplifying units each amplifying the first and second band signals input through the input impedance matching unit; a common ground circuit unit connected between a first common node commonly connected to the first and second band amplifying unit and a ground and including an impedance device for matching of an input impedance; and an output amplifying unit amplifying signals from each of the first and second band amplifying units. |
地址 |
Suwon-Si KR |