MEMORY DEVICE, MEMORY SYSTEM AND OPERATING METHOD OF MEMORY DEVICE

摘要

Disclosed are a memory device, a memory system and a memory device operation method. According to an embodiment of the present invention, the memory device operation method includes an on-chip ECC and is composed of the following steps: a step to check errors of data read in from a first address of memory cell array of the memory device; a step to count the number of errors in the first address and saves the counts in a first table; a step to receive a first command for the first address; a step to determine the number of errors in the first address is greater than value 1 by referring to the first table; and a step to map the first address to the second address if the number of errors in the first address is greater than value 1.