发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 Provided is a substrate processing including: a plasma generation source configured to generate the plasma within the processing container; a substrate holding mechanism configured to hold the substrate within the processing container; a separation plate disposed between the plasma generation source and the substrate holding mechanism and having a plurality of openings formed therein, in which the plurality of openings are configured to neutralize the plasma generated in the plasma generation source so as to form neutral particles, and to irradiate the neutral particles onto the substrate; and a directivity adjusting mechanism configured to adjust directivity of the neutral particles irradiated onto the substrate such that a plurality of peak values of an incident angle distribution of the neutral particles on the substrate are distributed at positions which are deviated from a normal direction of the substrate and located on both sides of the normal direction.
申请公布号 US2015197853(A1) 申请公布日期 2015.07.16
申请号 US201514597929 申请日期 2015.01.15
申请人 TOKYO ELECTRON LIMITED ;TOHOKU TECHNO ARCH CO., LTD. 发明人 ISHIBASHI Kiyotaka;KIKUCHI Yoshiyuki;SAMUKAWA Seiji
分类号 C23C16/50;C23C16/458;C23C16/455;C23C16/52 主分类号 C23C16/50
代理机构 代理人
主权项 1. A substrate processing apparatus that processes a substrate within a processing container by plasma, the substrate processing apparatus comprising: a plasma generation source configured to generate the plasma within the processing container; a substrate holding mechanism disposed to face the plasma generation source, and configured to hold the substrate within the processing container; a separation plate disposed between the plasma generation source and the substrate holding mechanism and having a plurality of openings formed therein, the plurality of openings being configured to neutralize the plasma generated in the plasma generation source so as to form neutral particles, and to irradiate the neutral particles onto the substrate held on the substrate holding mechanism; and a directivity adjusting mechanism configured to adjust directivity of the neutral particles irradiated onto the substrate such that a plurality of peak values of an incident angle distribution of the neutral particles on the substrate held by the substrate holding mechanism are distributed at positions which are deviated from a normal direction of the substrate and located on both sides of the normal direction.
地址 Tokyo JP