SEMICONDUCTOR STRUCTURE HAVING AN AIR-GAP REGION AND A METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor structure comprises a first conductive material-containing layer. The first conductive material-containing layer comprises a dielectric material, at least two conductive structures in the dielectric material, and an air-gap region in the dielectric material between the at least two conductive structures. The semiconductor structure also comprises a capping layer over the at least two conductive structures and the air-gap region. The semiconductor structure further comprises a second conductive material-containing layer over the capping layer. The second conductive material-containing layer comprises a via plug electrically connected to one of the at least two conductive structures. The via plug is separated from the air-gap region by at least a first predetermined distance. The semiconductor structure additionally comprises a conductive pad over the second conductive material-containing layer. The conductive pad is offset from the air-gap region by at least a second predetermined distance.

主权项

1. A semiconductor structure comprising:
a first conductive material-containing layer, comprising:
a dielectric material;at least two conductive structures in the dielectric material; andan air-gap region in the dielectric material between the at least two conductive structures; a capping layer over the at least two conductive structures and the air-gap region; a second conductive material-containing layer over the capping layer, the second conductive material-containing layer comprising a via plug electrically connected to one of the at least two conductive structures, the via plug being separated from the air-gap region by at least a first predetermined distance; and a conductive pad over the second conductive material-containing layer, the conductive pad being offset from the air-gap region by at least a second predetermined distance.