发明名称 |
FINFET CAPACITOR AND MANUFACTURING METHOD THEREOF |
摘要 |
A capacitor includes a semiconductor substrate. The capacitor also includes a first terminal having a fin disposed on a surface of the semiconductor substrate. The capacitor further includes a dielectric layer disposed onto the fin. The capacitor still further includes a second terminal having a FinFET compatible high-K metal gate disposed proximate and adjacent to the fin. |
申请公布号 |
EP2893560(A1) |
申请公布日期 |
2015.07.15 |
申请号 |
EP20130763160 |
申请日期 |
2013.09.04 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
ZHANG, RON;CHUA-EOAN, LEW G.;GU, SHIQUN |
分类号 |
H01L21/84;H01L27/06;H01L27/12;H01L27/13;H01L49/02 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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