发明名称 Structure comprising multiple capacitors and methods for forming the structure
摘要 Capacitors, apparatus including a capacitor, and methods for forming a capacitor are provided. One such capacitor may include a first conductor a second conductor above the first conductor, and a dielectric between the first conductor and the second conductor. The dielectric does not cover a portion of the first conductor; and the second conductor does not cover the portion of the first conductor not covered by the dielectric.
申请公布号 US9082555(B2) 申请公布日期 2015.07.14
申请号 US201113214902 申请日期 2011.08.22
申请人 Micron Technology, Inc. 发明人 Kwong Tae Heui
分类号 H01G4/06;H01G4/30;H01G4/005 主分类号 H01G4/06
代理机构 Schwegman Lundberg & Woessner, P.A. 代理人 Schwegman Lundberg & Woessner, P.A.
主权项 1. A capacitor, comprising: a first planar conductive layer; a second planar conductive layer formed above the first planar conductive layer; a third planar conductive layer formed above the second conductive layer, the first planar conductive layer extending in at least two opposing directions parallel to and beyond the second planar conductive layer such that a first end upper surface portion and a second end upper surface portion of the first planar conductive layer each extend beyond a respective first end and a respective second end of the second planar conductive layer, the second conductive layer extending in at least two opposing directions parallel to and beyond the third planar conductive layer such that a first end upper surface portion and a second end upper surface portion of the second planar conductive layer each extend beyond a respective first end and a respective second end of the third planar conductive layer, thereby forming a dual stair-step structure; a first dielectric material layer interposed between the first planar conductive layer and the second planar conductive layer, a second dielectric layer interposed between the second planar conductive layer and the third planar conductive layer, the first dielectric material layer and the second dielectric material layer each arranged such that the first end surface portion and the second end surface portion of the first planar conductive layer and the second planar conductive layer each extend beyond the respective dielectric material layer the first dielectric material layer and the second dielectric material layer thereby not covering the respective first end portions and the second end portions of the first planar conductive layer and the second planar conductive layer, respectively; and a first contact, a second contact, and a third contact each electrically coupled only at one or both ends of the dual stair-step structure of the respective upper surface portions of the first planar conductive layer, the second planar conductive layer, and the third planar conductive layer, the first contact, a second contact, and the third contact being coupled only at one or both ends thereby avoiding locating contacts at a point intermediary between the ends of the dual stair-step structure.
地址 Boise ID US