| 摘要 |
<p>A light emitting device according to an embodiment comprises a substrate; a light emitting structure formed on the substrate, and including a first semiconductor layer, a second semiconductor layer, and an active layer placed between the first semiconductor layer and the second semiconductor layer; a current limitation layer formed on a part of area on the second semiconductor layer; a conductive layer formed on the current limitation layer; a second electrode formed on the conductive layer, and having at least one part vertically overlapped with the current limitation layer and the conductive layer; and a transparent conductive layer located on the light emitting structure, and having at least one part vertically overlapped with the current limitation layer and the conductive layer.</p> |
