| 发明名称 |
METHOD AND APPARATUS FOR SCREENING MEMORY CELLS FOR DISTURB FAILURES |
| 摘要 |
Embodiments include a method comprising: receiving a first voltage; and while testing a memory cell: modifying the first voltage to generate a second voltage that is different from the first voltage; and performing a first read operation on the memory cell, based on applying (i) the second voltage to an array of transistors of the memory cell and (ii) the first voltage to the memory cell. |
| 申请公布号 |
US2015194207(A1) |
申请公布日期 |
2015.07.09 |
| 申请号 |
US201414567955 |
申请日期 |
2014.12.11 |
| 申请人 |
Marvell World Trade Ltd. |
发明人 |
Lee Winston;Son Moon-Hae;Lee Peter |
| 分类号 |
G11C11/419 |
主分类号 |
G11C11/419 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
receiving a first voltage; and while testing a memory cell:
modifying the first voltage to generate a second voltage that is different from the first voltage; andperforming a first read operation on the memory cell, based on applying (i) the second voltage to an array of transistors of the memory cell and (ii) the first voltage to the memory cell. |
| 地址 |
St. Michael BB |
