| 摘要 |
<p>Provided is an apparatus for supplying gas on a substrate. An apparatus for treating a substrate comprises: a chamber providing a treatment space in which the substrate is processed inside; a support unit located in the treatment space and supporting the substrate; a gas supply unit arranged at the top of the support unit and supplying process gas to the treatment space; and a heater heating the substrate, wherein the gas supply unit comprises: a first gas flow path in which a first process gas flows; a second gas glow path in which a second process gas flows; and a nozzle in which a cooling flow path where a cooling fluid flows is formed. The cooling flow path has a first channel arranged between the first gas flow path and the second gas flow path. A first procee gas provided to the first gas flow path can be sprayed without a connection tube so that the nozzle can be easily manufactured.</p> |
