| 摘要 |
<p>The present invention relates to an ion beam sputtering apparatus and, more specifically, relates to an ion beam sputtering apparatus by which an ion formed on a plasma generating unit is drawn to high energies of a dozen of KeV, and to a high current which is a current draw of 50 mA or more such that a thin film installed and rotated at a regular angle or sputtered by accelerating to a conical target (an alloy or a ceramic such as a sputter material, STS, SiO_2, and Al_2O_3 and the like) surface is deposited on a sample. Therefore, both a conductor and a nonconductor can be used as a target; a deposition of a large area is easily performed; and adhesion is excellent.</p> |
