| 摘要 |
<p>Provided is a thermal CVD device wherein it is possible to prevent the film quality of SiO2 films or SiOF films from deteriorating by using a raw material gas that does not contain hydrogen. The thermal CVD device is provided with: a chamber (1); a stage (4) which is disposed within the chamber and which holds a substrate (6) whereupon a film is to be formed; a gas shower supplying member (3) which is disposed within the chamber and in a position facing the substrate that is held by the stage; a heating mechanism (5) for heating the substrate held by the stage; a raw material gas supplying mechanism for supplying raw material gas into the chamber; an oxidizing gas supplying mechanism for supplying oxidizing gas into the chamber; and an exhaust mechanism for exhausting the chamber. The raw material gas comprises a Si material that does not contain hydrogen.</p> |
