发明名称 |
Photomask blank, photomask, and method for manufacturing photomask blank |
摘要 |
A photomask blank for producing a photomask to which an ArF excimer laser light is applied. The blank includes a light transmissive substrate on which a thin film having a multilayer structure is provided. The thin film has a light-shielding film in which a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer are laminated in this order. The light-shielding layer comprises chromium and nitrogen, and the chromium content is more than 50 atomic %. The front-surface antireflection layer and the back-surface antireflection layer each has an amorphous structure made of a material comprising chromium, nitrogen, oxygen and carbon. The chromium content ratio of the front-surface antireflection layer and the back-surface antireflection layer is 40 atomic % or less. A first sum of nitrogen content and oxygen content of the back-surface antireflection layer is less than a second sum of nitrogen content and oxygen content of the front-surface antireflection layer. |
申请公布号 |
US9075314(B2) |
申请公布日期 |
2015.07.07 |
申请号 |
US201313944251 |
申请日期 |
2013.07.17 |
申请人 |
HOYA CORPORATION |
发明人 |
Iwashita Hiroyuki;Shishido Hiroaki;Kominato Atsushi;Hashimoto Masahiro;Hosoya Morio |
分类号 |
G03F1/26;G03F1/46;G03F1/50;G03F1/58;G03F1/22;G03F1/54;H01L21/027 |
主分类号 |
G03F1/26 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. A photomask blank for producing a photomask to which an ArF excimer laser light is applied, wherein:
a thin film having a multilayer structure is provided on a light transmissive substrate; the uppermost layer of the thin film has an amorphous structure made of a material comprising chromium, nitrogen and oxygen; and the Cr content is 35 atomic % or less, and the sum of the N content and the O content is 50 atomic % or more. |
地址 |
Tokyo JP |