| 发明名称 | Semiconductor package | ||
| 摘要 | Provided are a semiconductor die and a semiconductor package. The semiconductor package includes: a monolithic die; a driving circuit, a low-side output power device, and a high-side output power device disposed in the monolithic die; and an upper electrode and a lower electrode disposed above and below the monolithic die. | ||
| 申请公布号 | US9076778(B2) | 申请公布日期 | 2015.07.07 |
| 申请号 | US201314104754 | 申请日期 | 2013.12.12 |
| 申请人 | MagnaChip Semiconductor, Ltd. | 发明人 | Hebert Francois |
| 分类号 | H01L23/495;H01L23/00;H01L23/31 | 主分类号 | H01L23/495 |
| 代理机构 | NSIP Law | 代理人 | NSIP Law |
| 主权项 | 1. A semiconductor package, comprising: a monolithic die; a driving circuit, a low-side output power device, and a high-side output power device disposed in the monolithic die; and an upper electrode and a lower electrode disposed above and below the monolithic die, the lower electrode electrically connected to a power ground, wherein the low-side output power device comprises a bottom-source type lateral double diffused metal oxide semiconductor (LDMOS). | ||
| 地址 | Cheongju-si KR | ||