| 发明名称 | Polycrystalline silicon rod | ||
| 摘要 | A polycrystalline silicon rod comprises a seed rod made of polycrystalline silicon, and a polycrystalline silicon deposit which is deposited on the outer circumferential surface of the seed rod by the CVD process. A diameter of the polycrystalline silicon rod is 77 mm or less. When the polycrystalline silicon rod is observed by an optical microscope with respect to the cross section perpendicular to an axis of the seed rod, needle-shaped crystals each having a length of 288 μm or less are uniformly distributed radially with the seed rod being as the center in the polycrystalline silicon deposit. The needle-shaped crystals account for 78% or more of the cross section. | ||
| 申请公布号 | US9074299(B2) | 申请公布日期 | 2015.07.07 |
| 申请号 | US201313924932 | 申请日期 | 2013.06.24 |
| 申请人 | MITSUBISHI MATERIALS CORPORATION | 发明人 | Kaito Ryoichi |
| 分类号 | C01B33/02;B32B27/32;G11B11/105;C30B29/62;C30B29/06;C01B33/035 | 主分类号 | C01B33/02 |
| 代理机构 | Locke Lord LLP | 代理人 | Locke Lord LLP |
| 主权项 | 1. A polycrystalline silicon rod comprising a seed rod made of polycrystalline silicon, and a polycrystalline silicon deposit which is deposited on an outer circumferential surface of the seed rod by the CVD process, wherein a diameter of the polycrystalline silicon rod is 77 mm or less, wherein when the polycrystalline silicon rod is observed by an optical microscope with respect to across section perpendicular to an axis of the seed rod, needle-shaped crystals each having a length of 288 μm or less are uniformly distributed radially with the seed rod being as the center in the polycrystalline silicon deposit, and wherein said needle-shaped crystals account for 78% or more area of the cross section. | ||
| 地址 | Tokyo JP | ||