Method of forming an oxide layer and method of manufacturing semiconductor device including the oxide layer

摘要

A method of forming an oxide layer. The method includes: forming a layer of reaction-inhibiting functional groups on a surface of a substrate; forming a layer of precursors of a metal or a semiconductor on the layer of the reaction-inhibiting functional groups; and oxidizing the precursors of the metal or the semiconductor in order to obtain a layer of a metal oxide or a semiconductor oxide. According to the method, an oxide layer having a high thickness uniformity may be formed and a semiconductor device having excellent electrical characteristics may be manufactured.

主权项

1. A method of forming an oxide layer, the method comprising:
i) providing an organic compound including a hydroxy group on a surface of a substrate; ii) forming a layer of reaction-inhibiting functional groups from the organic compound directly on the surface of the substrate; iii) forming a layer of precursors of a particular material on the layer of the reaction-inhibiting functional groups; iv) oxidizing the layer of the precursors of the particular material to obtain an oxide layer of the particular material; and repeating steps i), ii), iii) and iv) in series until a desired thickness of the oxide layer is obtained, wherein the reaction-inhibiting functional groups comprise an alkoxy group having 1 to 4 carbon atoms, an aryloxy group having 6 to 10 carbon atoms, an ester group having 1 to 5 carbon atoms, or an arylester group having 7 to 10 carbon atoms.