Group 13 Nitride Composite Substrate Semiconductor Device, and Method for Manufacturing Group 13 Nitride Composite Substrate

摘要

Provided are a group 13 nitride composite substrate allowing for the production of a semiconductor device suitable for high-frequency applications while including a conductive GaN substrate, and a semiconductor device produced using this substrate. The group 13 nitride composite substrate includes a base material of an n-conductivity type formed of GaN, a base layer located on the base material, being a group 13 nitride layer having a resistivity of 1×106 Ω·cm or more, a channel layer located on the base layer, being a GaN layer having a total impurity density of 1×1017/cm3 or less, and a barrier layer that is located on the channel layer and is formed of a group 13 nitride having a composition AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1).

主权项

1. A group 13 nitride composite substrate, comprising:
a base material of an n-conductivity type formed of GaN; a base layer located on said base material, said base layer being a group 13 nitride layer having a resistivity of 1×106 Ω·cm or more; a channel layer located on said base layer, said channel layer being a GaN layer having a total impurity concentration of 1×1017/cm3 or less; and a barrier layer located on said channel layer, said barrier layer being formed of a group 13 nitride having a composition AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1).