Methods of forming nitrides at low substrate temperatures

摘要

Provided are methods of forming nitrides at low substrate temperatures, such as less than 500° C. or even less than 400° C. The nitrides can be formed using atomic layer deposition (ALD), chemical vapor deposition (CVD), and other like techniques. The low substrate temperatures allow using various temperature sensitive precursors, such as Tetrakis(DiMethylAmino)Hafnium (i.e., TDMAHf) or TertiaryButylimido-Tris(DiEthylamino)Tantalum (i.e., TBTDET), to form nitrides of components provided by these precursors. Furthermore, the low temperatures preserve other structures present on the substrate prior to forming the nitride layers. Nitrogen-containing precursors with low dissociation energy are used in these methods. Some examples of such nitrogen-containing precursors include hydrazine (N2H4), diazene (N2H2), triazene (N3H3), triazane (N3H5), alkyl-substituted variations thereof, and salts thereof. Also provided are methods of forming oxy-nitrides using low substrate temperatures. Nitride and oxy-nitride layers formed using these methods may be used as embedded resistors in resistive switching memory (ReRAM) cells and other like applications.

主权项

1. A method comprising:
providing a substrate in a chamber; introducing a first precursor and a second precursor into the chamber,
wherein the first precursor comprises nitrogen, andwherein the second precursor comprises a chemical element other than nitrogen; and forming a layer on a surface of the substrate,
wherein forming comprises chemically reacting the first precursor and the second precursor,wherein the layer comprises nitrogen and the chemical element; andwherein the substrate is maintained at a temperature of less than 500° C. while the layer is being formed and the first precursor and the second precursor chemically react.