High-k dielectrics with gold nano-particles

摘要

A metal oxide semiconductor (MOS) structure having a high dielectric constant gate insulator layer containing gold (Au) nano-particles is presented with methods for forming the layer with high step coverage of underlying topography, high surface smoothness, and uniform thickness. The transistor may form part of a logic device, a memory device, a persistent memory device, a capacitor, as well as other devices and systems. The insulator layer may be formed using atomic layer deposition (ALD) to reduce the overall device thermal exposure. The insulator layer may be formed of a metal oxide, a metal oxycarbide, a semiconductor oxide, or semiconductor oxide oxycarbide, and the gold nano-particles in insulator layer increase the work function of the insulator layer and affect the tunneling current and the threshold voltage of the transistor.

主权项

1. A device comprising:
a semiconductive substrate with a dielectric layer comprising; a first layer of an insulator material composed of a metal oxycarbide without containing silicon disposed on a portion of the semiconductive substrate and having a first thickness; a second layer of a material composed of gold nano-particles, operative as charge trapping particles, disposed on top of the first layer of the insulator material and having a second thickness, and; a third layer of an insulator material disposed on the second layer having a third thickness; and a conductive material disposed on the third layer of insulator material.