Thin-film transistor and method of making same

摘要

A thin-film transistor includes a substrate, and a gate including a double-layered structure having first and second metal layers provided on the substrate, the first metal layer being wider than the second metal layer by 1 to 4 μm. A method of making such a thin-film transistor includes the steps of: depositing a first metal layer on a substrate, depositing a second metal layers directly on the first metal layer; forming a photoresist having a designated width on the second metal layer; patterning the second metal layer via isotropic etching using the photoresist as a mask; patterning the first metal layer by means of an anisotropic etching using the photoresist as a mask, the first metal layer being etched to have the designated width, thus forming a gate having a laminated structure of the first and second metal layers; and removing the photoresist.

主权项

1. A method of making a thin-film transistor, comprising the steps of:
depositing a first metal layer on a substrate; depositing a second metal layer on the first metal layer without forming a photoresist on the first metal layer beforehand; forming a photoresist having a predetermined width on the second metal layer; anisotropically etching the first and second metal layers so such that the first metal layer and the second metal layer have the same width of the photoresist by using the photoresist as a mask, isotropically etching the second metal layer such that the second metal layer is narrower than the first metal layer by about 1 μm to about 4 μm by using the photoresist as a mask, thus forming a gate having a double-layered structure including the first and second metal layers; and removing the photoresist.