| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor device which can increase an output. ! SOLUTION: A compound semiconductor device comprises: a first electrode 110 which has an opening and is formed on a +Z side of a semiconductor substrate 101; a first spacer layer 102, an active layer 103, a second spacer layer 104, a reflector 105 and a contact layer 106 which are sequentially laminated on a -Z side of the semiconductor substrate 101; a second electrode 111 formed on a -Z side of the contact layer 106; and a region (diffusion region) where a component of the second electrode 111 diffuses to the contact layer 106 and the reflector 105, which exists on a +Z side of a peripheral part of the second electrode 111. The diffusion region does not exist on a +Z side of a central part of the second electrode 111. As a result, a non-uniform reflectance distribution is formed inside a current injection region and a region having a high optical confinement effect can be formed at a central part of the curre |
