METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device according to the embodiment of the present invention includes the steps of: forming a first wire layer to expose a first conductive layer and a first insulation layer from a surface; forming a second wire layer to expose a second conductive layer and a second insulation layer from the surface; forming a first non-bonding surface on the surface of the first insulation layer by forming a partial region of the surface of the first insulation layer including the surroundings of the first conductive layer to be lower than the surface of the first conductive layer; bonding the surface of the first conductive layer to the surface of the second conductive layer; and bonding the surface of the second insulation layer to the surface of the first insulation layer except the first non-bonding surface.