SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING THE SAME

摘要

The semiconductor light-emitting element includes: a substrate; a semiconductor layer that is provided over the substrate; a first electrode that is provided in contact with part of an upper surface of the semiconductor layer and includes a current supply part; a second electrode that is provided in part of a region vertically below a region where the current supply part is not provided, that is in contact with part of the semiconductor layer; and a first current blocking layer that is provided in a region including a region vertically below the current supply part and that is in contact with part of the semiconductor layer, wherein a contact resistance at an interface between the first current blocking layer and the semiconductor layer is higher than that at an interface between the second electrode and the semiconductor layer.

主权项

1. A semiconductor light-emitting element comprising:
a substrate; a semiconductor layer that is provided over the substrate and comprises a p-type semiconductor layer, a light-emitting layer, and an n-type semiconductor layer; a first electrode that is provided in contact with part of an upper surface of the semiconductor layer and comprises a current supply part connected to a current supply line; a second electrode that is provided in part of a region vertically below a region where the current supply part is not provided, that is in contact with part of a bottom surface of the semiconductor layer, and that is made of a material that reflects light emitted from the light-emitting layer; and a first current blocking layer that is provided in a region including a region vertically below the current supply part and that is in contact with part of the bottom surface of the semiconductor layer, wherein a contact resistance at an interface between the first current blocking layer and the semiconductor layer is higher than that at an interface between the second electrode and the semiconductor layer.