| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and a ferroelectric element that are easily used in a liquid process and capable of controlling orientation.SOLUTION: A manufacturing method according to the present invention relates to a semiconductor device, comprises: source and drain electrodes; an organic semiconductor film disposed between the source electrode and the drain electrode and having a channel portion; a gate electrode; and a gate insulating film disposed between the channel portion and the gate electrode. The manufacturing method comprises the steps of: heating the channel portion to a first temperature; and forming the gate insulating film by a coating process of arranging a droplet material including an insulating polymer of a second temperature lower than the first temperature on the organic semiconductor film of the first temperature and extending the droplet material in a certain direction. |
