| 摘要 |
Provided is a thin film transistor substrate (1) comprising a thin film transistor (DrTr) that includes an oxide semiconductor layer (5), a source electrode (7S), and a drain electrode (7D). The thin film transistor substrate (1) additionally comprises: first wiring (9) that is formed in a layer that is above the layer in which the source electrode (7S) and the drain electrode (7D) are formed and that is connected to at least one of the source electrode (7S) and the drain electrode (7D); and a terminal (12) that is formed in a layer that is above the layer in which the first wiring (9) is formed and that is connected to the first wiring (9). The source electrode (7S) or the drain electrode (7D) that is connected to the first wiring (9) contains copper. The first wiring (9) is a layered film that comprises a first film (9a) (a transparent conductive film), a second film (9b) (a copper film), and a third film (9c) (a copper-manganese alloy film) that are layered in this order from bottom to top. The terminal (12) comprises an aluminum alloy. |
