发明名称 |
THREE-DIMENSIONAL NON-VOLATILE MEMORY DEVICE AND METHODS OF FABRICATION THEREOF |
摘要 |
A method of fabricating a semiconductor device, such as a three-dimensional NAND memory string, includes forming a first stack of alternating layers of a first material and a second material different from the first material over a substrate, removing a portion of the first stack to form a first trench, filling the trench with a sacrificial material, forming a second stack of alternating layers of the first material and the second material over the first stack and the sacrificial material, removing a portion of the second stack to the sacrificial material to form a second trench, and removing the sacrificial material to form a continuous trench through the first stack and the second stack. |
申请公布号 |
WO2015041824(A3) |
申请公布日期 |
2015.06.18 |
申请号 |
WO2014US53055 |
申请日期 |
2014.08.28 |
申请人 |
SANDISK TECHNOLOGIES, INC. |
发明人 |
PACHAMUTHU, JAYAVEL;ALSMEIER, JOHANN;MAKALA, RAGHUVEER S.;LEE, YAO-SHENG |
分类号 |
H01L27/06;H01L27/10;H01L27/115 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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