Power semiconductor device

摘要

Disclosed is a semiconductor device comprising a semiconductor slab (1), in particular a semiconductor wafer or semiconductor die, the semiconductor slab having a first main side (101) and a second main side (102), said second main side being parallel to the first main side at a distance with respect to a first direction; and a bulk layer (10) of a first conductivity type located between the first main side and the second main side, and extending in the first direction between a distance d b1 from the first main side with d b1 >= 0 and a distance d b2 from the first main side with d b2 > d b1 , and in a second direction perpendicular to the first direction, and with a first floating sublayer formed within the bulk layer, said first floating sublayer comprising a plurality of, preferably at least 10, floating regions (11) of a second conductivity type located between a first distance from the first main side and a second distance from the first main side, and spaced apart from one another with respect to the second direction, a first homogenous bulk sublayer located between the first main side and the first floating sublayer; a second homogenous bulk sublayer located between the first floating sublayer and the second main side; the semiconductor device further comprising a first main electrode (31) provided on the first main side and a second main electrode (32) provided on the second main side, wherein an enhancement region (12) of the first conductivity type is formed adjacent, preferably contiguous, to at least one of the floating regions in the first floating sublayer; and the enhancement region has a higher doping concentration than the bulk layer.