发明名称 |
Thermal treatment method of silicon wafer and silicon wafer |
摘要 |
There is provided a thermal treatment method of a silicon wafer. The method includes the successive steps of: (a) terminating silicon atoms existing on an active surface of the silicon wafer with hydrogen, wherein the active surface is mirror-polished, and a semiconductor device is to be formed on the active surface; (b) terminating the silicon atoms existing on the active surface of the silicon wafer with fluorine; (c) rapidly heating the silicon wafer to a first temperature under an inert gas atmosphere or a reducing gas atmosphere, wherein the first temperature is in a range of 1300° C. to 1400° C.; (d) holding the silicon wafer at the first temperature for a certain time; and (e) rapidly cooling the silicon wafer. |
申请公布号 |
US9059099(B2) |
申请公布日期 |
2015.06.16 |
申请号 |
US201213421748 |
申请日期 |
2012.03.15 |
申请人 |
GLOBAL WAFERS JAPAN CO., LTD. |
发明人 |
Senda Takeshi;Araki Koji |
分类号 |
H01L21/322;H01L21/324;H01L21/306;H01L21/02 |
主分类号 |
H01L21/322 |
代理机构 |
McGinn IP Law Group, PLLC |
代理人 |
McGinn IP Law Group, PLLC |
主权项 |
1. A thermal treatment method of a silicon wafer, the method comprising the successive steps of:
(a) terminating silicon atoms existing on an active surface of the silicon wafer with hydrogen, wherein the active surface is mirror-polished, and a semiconductor device is to be formed on the active surface; (b) terminating the silicon atoms existing on the active surface of the silicon wafer with fluorine; (c) rapidly heating the silicon wafer to a first temperature under an inert gas atmosphere or a reducing gas atmosphere, wherein the first temperature is in a range of 1300° C. to 1400° C.; (d) holding the silicon wafer at the first temperature for a certain time; and (e) rapidly cooling the silicon wafer. |
地址 |
Niigata JP |