III-Nitride metal-insulator-semiconductor field-effect transistor

摘要

A field effect transistor (FET) includes a III-Nitride channel layer, a III-Nitride barrier layer on the channel layer, wherein the barrier layer has an energy bandgap greater than the channel layer, a source electrode electrically coupled to one of the III-Nitride layers, a drain electrode electrically coupled to one of the III-Nitride layers, a gate insulator layer stack for electrically insulating a gate electrode from the barrier layer and the channel layer, the gate insulator layer stack including an insulator layer, such as SiN, and an AlN layer, the gate electrode in a region between the source electrode and the drain electrode and in contact with the insulator layer, and wherein the AlN layer is in contact with one of the III-Nitride layers.

主权项

1. A method of fabricating a field effect transistor (FET) comprising:
forming a III-Nitride channel layer above a substrate; forming a III-Nitride barrier layer on the channel layer, wherein the barrier layer has an energy bandgap greater than the channel layer; forming a source electrode electrically coupled to one of the III-Nitride layers; forming a drain electrode electrically coupled to one of the III-Nitride layers; forming a gate insulator layer stack for electrically insulating a gate electrode from the barrier layer and the channel layer, the gate insulator layer stack comprising:
an insulator layer; andan AlN layer; and forming a gate electrode on the insulator layer in a region between the source electrode and the drain electrode; wherein the AlN layer is in contact with one of the III-Nitride layers; wherein the AlN layer has a thickness ranging from 1.5 nanometers to 50 nanometers.