Photoconductor-on-active pixel device

摘要

A design structure embodied in a machine readable medium used in a design process includes a first dielectric layer disposed on an intermediary layer, a first conductive pad portion and a first interconnect portion disposed on the first dielectric layer, a second dielectric layer disposed on the first dielectric layer, a first capping layer disposed on the first interconnect portion and a portion of the first conductive pad portion, a second capping layer disposed on the first capping layer and a portion of the second dielectric layer, an n-type doped silicon layer disposed on the second capping layer and the first conductive pad portion, an intrinsic silicon layer disposed on the n-type doped silicon layer, and a p-type doped silicon layer disposed on the intrinsic silicon layer.

主权项

1. A photoconductor-on-active pixel device comprising:
a first dielectric layer disposed on an intermediary layer; a first conductive pad portion and a first interconnect portion disposed on the first dielectric layer; a second dielectric layer disposed on the first dielectric layer; a first capping layer disposed on the first interconnect portion and a portion of the first conductive pad portion, the first capping layer including an etched upper surface that are flush with an upper surface of the second dielectric layer; a second capping layer disposed on the first capping layer and a portion of the second dielectric layer; an n-type doped silicon layer disposed on the second capping layer and the first conductive pad portion; an intrinsic silicon layer disposed on the n-type doped silicon layer; and a p-type doped silicon layer disposed on the intrinsic silicon layer.