发明名称 |
SEMICONDUCTOR DEVICE WITH PROFILED WORK-FUNCTION METAL GATE ELECTRODE AND METHOD OF MAKING |
摘要 |
The present disclosure provides a semiconductor device with a profiled work-function metal gate electrode. The semiconductor structure includes a metal gate structure formed in an opening of an insulating layer. The metal gate structure includes a gate dielectric layer, a barrier layer, a work-function meta layer between the gate dielectric layer and the barrier layer and a work-function adjustment layer over the barrier layer, wherein the work-function metal has an ordered grain orientation. The present disclosure also provides a method of making a semiconductor device with a profiled work-function metal gate electrode. |
申请公布号 |
KR20150065145(A) |
申请公布日期 |
2015.06.12 |
申请号 |
KR20140169496 |
申请日期 |
2014.12.01 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LEE DA YUAN;LIU KUAN TING;CHUNG HUNG CHIN;LEE HSIEN MING;CHANG WENG;JANG SYUN MING;LO WEI JEN |
分类号 |
H01L27/092;H01L21/768;H01L21/8238 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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