| 摘要 |
<p>The purpose of the present invention is to provide a method for manufacturing a transfer mask capable of reducing distortion of resist pattern, collapse of pattern, expansion of resist pattern and forming a resist pattern with a straight pattern edge. The method for manufacturing a transfer mask includes: a process of preparing a substrate with a thin film; a process of forming a resist film on a surface of the thin film; a process of exposing the resist film; a process of forming a resist pattern by developing the resist film after the exposure; and a process of etching a thin film by using the resist pattern as a mask. In the process of forming the resist pattern, the resist film is formed by chemical amplification and negative resist liquid. A developer used in the developing process is a solvent A and solvent B which are an organic solvent, and a solvent C which is an organic solvent and is more difficult to dissolve the resist film than the solvent A and the solvent B. The boiling point of the solvent A is higher than that of the solvent C, and the boiling point of the solvent C is higher than that of the solvent B.</p> |
