发明名称 Solid-state imaging device
摘要 A solid-state imaging device 2A includes a CCD-type solid-state imaging element 10 having an imaging plane 12 formed of M×N pixels that are two-dimensionally arrayed in M rows and N columns and N signal readout circuits 20 arranged on one end side in the column direction for each of the columns with respect to the plane 12 and for outputting electrical signals according to the magnitudes of charges taken out of the respective columns, respectively, a C-MOS-type semiconductor element 50 for digital-converting and sequentially outputting as serial signals electrical signals output from the circuits 20 for each of the columns, a heat transfer member 80 having a main surface 81a and a back surface 81b, and a cooling block 84 provided on the surface 81b, and the semiconductor element 50 and the surface 81a of the heat transfer member 80 are bonded to each other.
申请公布号 US9054000(B2) 申请公布日期 2015.06.09
申请号 US201213666149 申请日期 2012.11.01
申请人 HAMAMATSU PHOTONICS K.K. 发明人 Suyama Motohiro;Ujima Akiomi;Maeta Kentaro;Suzuki Hisanori;Muramatsu Masaharu;Iwase Fumio
分类号 H04N5/225;H01L27/146 主分类号 H04N5/225
代理机构 Drinker Biddle & Reath LLP 代理人 Drinker Biddle & Reath LLP
主权项 1. A solid-state imaging device comprising: a CCD-type solid-state imaging element having an imaging plane formed of M×N (M and N are integers not less than 2) pixels that are two-dimensionally arrayed in M rows and N columns and N first signal readout circuits arranged on one end of the imaging plane in the column direction for each of the columns with respect to the imaging plane and for outputting electrical signals according to magnitudes of charges taken out of the respective columns, respectively; a C-MOS-type first semiconductor circuit for converting electrical signals output from the first signal readout circuits for each of the columns to digital signals, and sequentially outputting the digital signals of the respective columns as serial signals; a heat transfer member having a first surface and a second surface; and a cooling structure provided on the second surface; wherein: the first semiconductor circuit and the first surface of the heat transfer member are bonded to each other; the solid-state imaging element has N second signal readout circuits arranged on an other end of the imaging plane in the column direction for each of the columns with respect to the imaging plane and for outputting electrical signals according to magnitudes of charges taken out of the respective columns, respectively; the solid-state imaging device includes a C-MOS-type second semiconductor circuit for converting electrical signals output from the second signal readout circuits for each of the columns to digital signals, and sequentially outputting the digital signals of the respective columns as serial signals; the second semiconductor circuit and the first surface of the heat transfer member are bonded to each other; the imaging plane and the first and second signal readout circuits are formed in a main surface of the solid-state imaging element; the first semiconductor circuit is mounted on the main surface of the solid-state imaging element along the one end of the imaging plane in the column direction, the first semiconductor circuit covers the one end, each of N bonding pads of the first semiconductor circuit is electrically connected with, and faces in a normal direction of the imaging plane, one of N signal output bonding pads of the first signal readout circuits, and at least one of a plurality of circuits provided in the first semiconductor circuit is covered with the solid-state imaging element when viewed in a normal direction of the imaging plane; the second semiconductor circuit is mounted on the main surface of the solid-state imaging element along the other end of the imaging plane in the column direction, the second semiconductor circuit covers the other end, each of N bonding pads of the second semiconductor circuit is electrically connected with, and faces in a normal direction of the imaging plane, one of N signal output bonding pads of the second signal readout circuits, and at least one of a plurality of circuits provided in the second semiconductor circuit is covered with the solid-state imaging element when viewed in the normal direction of the imaging plane; and the first semiconductor circuit and the second semiconductor circuit are bonded to the first surface of the heat transfer member via underfills.
地址 Hamamatsu-shi, Shizuoka JP