发明名称 |
Systems, circuits, devices, and methods with bidirectional bipolar transistors |
摘要 |
Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low. |
申请公布号 |
US9054707(B2) |
申请公布日期 |
2015.06.09 |
申请号 |
US201414515348 |
申请日期 |
2014.10.15 |
申请人 |
Ideal Power Inc. |
发明人 |
Blanchard Richard A.;Alexander William C. |
分类号 |
H03K17/66;H02M3/158;H01L29/739;H01L29/08;H01L29/16;H01L29/737;H02M1/088;H02M7/797;H03K3/012;H03K17/687;H01L29/06;H01L29/10 |
主分类号 |
H03K17/66 |
代理机构 |
Groover & Associates PLLC |
代理人 |
Groover Gwendolyn S. S.;Groover, III Robert O.;Groover & Associates PLLC |
主权项 |
1. A bidirectional power switching apparatus, comprising:
first and second first-conductivity-type emitter regions on opposing faces of a second-conductivity-type semiconductor mass, and first and second second-conductivity-type base contact regions, in proximity to said first and second emitter regions respectively; and a drive circuit which, when the control circuitry selects one of said bidirectional switches for turn-on, drives the first and second base contact regions of that switch differently, to forward bias the associated emitter-base junction and permit majority carriers to flow to the associated emitter regions from the emitter regions on the opposing surface; wherein the drive circuit applies sufficient current to the selected base contact region to generate a nonequilibrium carrier concentration, in the interior of said semiconductor mass, which is more than thirty times as great as the off-state equilibrium majority carrier concentration, to thereby lower the voltage drop across the second-conductivity-type semiconductor mass. |
地址 |
Austin TX US |