PLASMA PROCESSING APPARATUS

摘要

Disclosed in the present invention is a plasma processing apparatus which comprises a reaction chamber including a reaction space; a substrate support prepared inside the reaction chamber, and supporting the substrate; an antenna unit prepared outside the upper side of the reaction chamber; a power part supplying power for generating plasma in the antenna unit; and a gas supply part for supplying a processing gas to the reaction chamber, wherein the antenna unit comprises an antenna, and multiple antenna holders fixing multiple areas of the antenna, and moving at least one area of the antenna in at least two direction.