POWER SEMICONDUCTOR DEVICE

摘要

A power semiconductor device may include: a first semiconductor layer having a first conductivity type; a second semiconductor layer formed on the first semiconductor layer, having a concentration of impurities higher than that of the first semiconductor layer, and having the first conductivity type; a third semiconductor layer formed on the second semiconductor layer and having a second conductivity type; a fourth semiconductor layer formed in an upper surface of the third semiconductor layer and having the first conductivity type; and trench gates penetrating from the fourth semiconductor layer into a portion of the first semiconductor layer and having gate insulating layers formed on surfaces thereof. The trench gates have a first gate, a second gate, and a third gate are sequentially disposed from a lower portion thereof, and the first gate, the second gate, and the third gate are insulated from each other by gate insulating films.

主权项

1. A power semiconductor device comprising:
a first semiconductor layer of first conductivity type; a second semiconductor layer of the first conductivity type disposed on the first semiconductor layer, and having a concentration of impurities higher than that of the first semiconductor layer; a third semiconductor layer of second conductivity type disposed on the second semiconductor layer; a fourth semiconductor layer of the first conductivity type disposed in an upper surface of the third semiconductor layer; and trench gates penetrating from the fourth semiconductor layer into a portion of the first semiconductor layer and having gate insulating layers disposed on surfaces thereof, wherein the trench gates have a first gate, a second gate, and a third gate sequentially disposed from a lower portion thereof, the first gate, the second gate, and the third gate being insulated from each other by gate insulating films.