MANUFACTURABLE SUB-3 NANOMETER PALLADIUM GAP DEVICES FOR FIXED ELECTRODE TUNNELING RECOGNITION

摘要

A technique is provided for manufacturing a nanogap in a nanodevice. An oxide is disposed on a wafer. A nanowire is disposed on the oxide. A helium ion beam is applied to cut the nanowire into a first nanowire part and a second nanowire part which forms the nanogap in the nanodevice. Applying the helium ion beam to cut the nanogap forms a signature of nanowire material in proximity to at least one opening of the nanogap.

主权项

1. A structure utilized in sequencing, the structure comprising:
an oxide on a wafer; a nanowire on the oxide; a tapered lateral area of the nanowire from applying a helium ion beam, the tapered lateral area forming a first nanowire part and a second nanowire part, wherein the first nanowire part and the second nanowire part form a first nanogap; the tapered lateral area forms a bridge connecting the first nanowire part and the second nanowire part; and a second nanogap in the bridge forming a first extension from the first nanowire part and a second extension from the second nanowire part.