SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME

摘要

A method for producing a semiconductor element includes a step of forming a multiple quantum well in which a GaSb layer and an InAs layer are alternately stacked on a GaSb substrate by MOVPE, wherein, in the step of forming a multiple quantum well, an InSb film is formed on at least one of a lower-surface side and an upper-surface side of the InAs layer so as to be in contact with the InAs layer.

主权项

1. A semiconductor element including III-V compound semiconductors formed on a III-V compound semiconductor substrate, the semiconductor element comprising:
a buffer layer disposed on the substrate; a first multiple quantum well disposed on the buffer layer, the first multiple quantum well including a GaSb layer and an InAs layer that are alternately stacked and a strain-compensating layer that is disposed on a lower-surface side or an upper-surface side of the InAs layer so as to be in contact with the InAs layer; and a second multiple quantum well including a GaSb layer and an InAs layer that are alternately stacked so as to be in contact with each other, the second multiple quantum well not including any strain-compensating layer on a lower-surface side or an upper-surface side of the InAs layer.