LOW RESISTANCE CONTACTS WITHOUT SHORTING

摘要

Devices and methods of forming a device are disclosed. A substrate prepared with at least a first transistor and a second transistor is provided. Each of the first and second transistors includes a gate disposed on the substrate between first and second contact regions in the substrate. A silicide block layer is formed on the substrate and is patterned to expose portions of the first and second contact regions. Silicide contacts are formed in the exposed first and second contact regions. The silicide contacts are displaced from sides of the gates of the first and second transistors. A contact dielectric layer is formed and contacts are formed in the contact dielectric layer. The contacts are in communication with the silicide contacts in the contact regions.

主权项

1. A method of forming a device comprising:
providing a substrate prepared with at least a first transistor and a second transistor, each of the first and second transistors having a gate disposed on the substrate between first and second contact regions in the substrate; forming a silicide block layer on the substrate; patterning the silicide block layer to expose portions of the first and second contact regions; forming silicide contacts in the exposed first and second contact regions, wherein the silicide contacts are displaced from sides of the gates of the first and second transistors; forming a contact dielectric layer; and forming contacts in the contact dielectric layer, wherein the contacts are in communication with the silicide contacts in the contact regions.