LASER LIFTOFF OF EPITAXIAL THIN FILM STRUCTURES

摘要

This work provides a new approach for epitaxial liftoff. Instead of using a sacrificial layer that is selectively etched chemically, the sacrificial layer selectively absorbs light that is not absorbed by other parts of the structure. Under sufficiently intense illumination with such light, the sacrificial layer is mechanically weakened, melted and/or destroyed, thereby enabling epitaxial liftoff. The perimeter of the semiconductor region to be released is defined (partially or completely) by lateral patterning, and the part to be released is also adhered to a support member prior to laser irradiation. The end result is a semiconductor region removed from its substrate and adhered to the support member.